27 Jun '11
A $185m plant to produce energy-independent Magnetic Random Access Memory (MRAM), developed by French company Crocus Technology in Kaliningrad region, news site UNOVA reports.
The project is reportedly carried out by state corporation RUSNANO, France’s Crocus Technology and Kaliningrad region-based General Satellite.
The plant’s projected annual capacity is 25,000 silicon slabs.
Construction of the plant is scheduled to start in Q1 2012 and last one year.
MRAM memory stores data using magnet elements, rather than electric charge. MRAM memory consumes less energy and works faster than Dynamic Random Access Memory (DRAM).