Central regions | Technology & innovation

Nanomaterials for new memory devices developed in Voronezh

8 Jul '16
Scientists at the Voronezh State University (VSU) in Central Russia have developed new magnetic nanostructured materials which could be used to make next gen memory devices.

The VSU team is said to have aimed to develop Si-Me based nanostructured materials “with an optical magnetization reversal effect” to come up with new memory components.

As a result of research, the team is reported to have developed materials that are expected to enable “ultra-high speed,” an improvement that stems from an innovative method of storing data no devices available today currently use. Immediate markets for the new materials include photonics, microsystem instrumentation, and memory devices.

VSU is one of Russia’s largest universities, running 18 departments with as many as 20,000+ students from 75 Russian regions. More than a thousand foreign students from 80 countries study there every year, with a total of about 15,000 from 141 foreign countries trained in Voronezh over the past 50 years.
Publish in Twitter
Write to Facebook
Google Buzz
Write to LiveJournal
Show in MM
Share MK
COMMENT ON THIS STORY
 

Feature stories

7 Dec '16
In spite of all current problems and adverse external...
2 Nov '16
Search (News archive - 21023)
Advertising
ARCCoM
Advertising
RBTH_Kendrick
Advertising
Hi-tech Technopark Association of Russia
Advertising
ITMO University

Latest News

20 Jan '17
A scientific team at the Siberian Federal University...
19 Jan '17
A new anti-tumor compound, developed by a scientific...
18 Jan '17
Russia fell 14 spots to #26 in the latest Bloomberg...

Most read stories from last week

19 Jan '17
A new anti-tumor compound, developed by a scientific...
18 Jan '17
Russia fell 14 spots to #26 in the latest Bloomberg...
20 Jan '17
A scientific team at the Siberian Federal University...