Central regions | Industry, manufacturing | Technology & innovation
Next gen memory production launched in Russia
1 Nov '13
Crocus Nanoelectronica, a JV between Russia’s Rusnano and France’s Crocus Technology, has launched the first stage of its Russian-based magnetoresistive random access memory production(MRAM), Rusnano announced earlier this week.
The project, which took a year to build, is the world’s first site to manufacture MRAM according to 90 nanometer design rule.
By the end of next year, the factory is expected to be operating with a capacity of 500 wafers a week. It is a 200 million euro project, with Rusnano kicking in half of the amount.
Magnetoresistive random access memory is a next gen memory demonstrating improved nonvolatile properties, an increased speed of recording and reading, and a virtually unlimited number of rerecording cycles.
The future products of the Russo-French project, based on MRAM and a proprietary technology called Magnetic Logic Unit, which Crocus Technology has developed in collaboration with IBM, could be used in smart cards, network switching systems, biometric identification devices, near-field communications (NFC) based communicators, and in secure memory.